Rapid heat treatment of a semiconductor multi-layer crowned wafer with local and selective adaptation of the heating to take account of local differences in heat absorption

摘要

The rapid heat treatment of a multi-layer wafer (10) with a crown (1020), made of semiconductor materials, is characterised in that during the annealing the heating is locally and selectively adapted at the level of the crown in order to take account of the local difference in heat absorption. Independent claims are also included for: (a) a method for finishing the surface state of a semiconductor multi-layer slice with a crown in which the wafer is selected so that it presents essentially equivalent heat absorption coefficients in its central region and on the crown; (b) a thermal continuity structure destined to be used in the heat treatment method, in which the dimensions of the structure are adapted to help establish on the wafer a crown temperature essentially equivalent to that of the rest of the wafer surface.