| 发明名称 |
Semiconductor device having an overhanging structure and method for fabricating the same |
| 摘要 |
An edge of a passivation film is positioned inside an edge of an overhanging emitter structure by a distance L so that a base electrode layer is formed at an interval not to overlap the edge of the passivation film even when the base electrode layer is formed by etching with the emitter structure as a mask.
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| 申请公布号 |
US6730586(B2) |
申请公布日期 |
2004.05.04 |
| 申请号 |
US20020092308 |
申请日期 |
2002.03.07 |
| 申请人 |
FUJITSU QUANTUM DEVICES LIMITED |
发明人 |
ENDOH HIROSHI |
| 分类号 |
H01L29/41;H01L21/331;H01L21/338;H01L29/737;H01L29/812;(IPC1-7):H01L21/28 |
主分类号 |
H01L29/41 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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