| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of cleaning contaminants from a CVD reactor chamber. SOLUTION: A method of cleaning the CVD reaction chamber by active oxygen species is provided. A method of forming a film, containing carbon on a semiconductor substrate in the CVD reaction chamber, comprises processes of: bringing the CVD reaction chamber into contact with the active oxygen species, transferring the semiconductor substrate into the CVD reaction chamber, evaporating the film containing carbon on the semiconductor substrate, transferring the semiconductor substrate out of the CVD reaction chamber, and bringing the CVD reaction chamber into contact with active fluorine species. The active oxygen species may be mixed with the active fluorine species. The active oxygen species is a plasma product, and is generated in the CVD reaction chamber or is generated at a remote place and is introduced into the CVD reaction chamber. COPYRIGHT: (C)2004,JPO
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