| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing a semiconductor device which enables production of a wafer having good in-plane homogeneity by chemical vapor deposition. SOLUTION: A current plate 17 is provided at a reaction gas inlet port 13 so as to extend to the upper portion of a preheating ring 5 which is disposed being connected to the port 13 and enclosing a susceptor 2 while being spaced from the outer periphery of the susceptor 2. COPYRIGHT: (C)2004,JPO
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