| 摘要 |
PROBLEM TO BE SOLVED: To provide an n-type thermoelectric transduction material and a manufacturing method thereof in which an output factor is enlarged by improving an electron movement degree inside a crystal and a performance exponent is remarkably improved. SOLUTION: In the manufacturing method of the n-type thermoelectric transduction material, at least two or more kinds of elements are selected for mixing and melting out of a group composed of elements of bismuth, tellurium, selenium, antimony and sulfur, and a dopant as needed. Next, a lump of a resultant alloy and burning ground powder of the lump of the alloy are ground. The manufacturing method includes an ordinary pressure burning step for burning the ground powder under the ordinary atmospheric pressure, and a hot-press burning step for hot-pressing a semi-burned object of the ground powder which is burned under the ordinary pressure exceeding the atmospheric pressure. COPYRIGHT: (C)2004,JPO
|
