ALD THIN FILM DEPOSITING APPARATUS

摘要

PURPOSE: An ALD(Atomic Layer Deposition) thin film depositing apparatus is provided to be capable of improving purge efficiency for obtaining an oxide layer having excellent step coverage and high permittivity. CONSTITUTION: An ALD thin film depositing apparatus is provided with a reaction chamber(100), the first, second and third reaction gas line(200,300,400) connected with the reaction chamber, and an exhaust line(500) for exhausting gas from the reaction chamber. The ALD thin film depositing apparatus further includes the first reaction gas supply part(210) for supplying the first reaction gas to the first reaction gas line or by-passing to the exhaust line, the first purge gas supply part(220) for supplying the first purge gas to the first reaction gas line or by-passing to the exhaust line, the second reaction gas supply part(3120), and the third reaction gas supply part(4120). At this time, the second reaction gas supply part includes the second reaction gas supply part(310) and the second main purge gas supply part(320). At the time, the third reaction gas supply part includes the third reaction gas supply part(410) and the third main purge gas supply part(420).