| 摘要 |
PURPOSE: A method for forming an inductor of a semiconductor device is provided to be capable of securing process margin. CONSTITUTION: The first etch stop layer(52), the first oxide layer(53), the second etch stop layer(54), and the second oxide layer(55) are sequentially formed on a silicon substrate(51). The second oxide layer is partially etched. At this time, the first μ -trench is generated at the lower sidewall of the second oxide layer. The first μ-trench is removed by performing an over-etching process on the resultant structure for exposing the second etch stop layer. The exposed second etch stop layer is etched for exposing the first oxide layer. The exposed first oxide layer is etched. At this time, the second μ-trench is generated at the lower sidewall of the first oxide layer. The second μ-trench is removed by performing an over-etching process on the resultant structure for exposing the first etch stop layer. A copper layer is deposited on the entire surface of the resultant structure. The copper layer is polished until the second oxide layer is exposed.
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