| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device along with its manufacturing method, in which the burden of man-hours is reduced with a simple and stable capacitive element. SOLUTION: A silicide layer 12 is provided on a silicon substrate 11. An element separation region 13 is arranged around the silicide layer 12. On the silicide layer 12, an interlayer insulating film 14 divided into a first layer 141 and a second layer 142 is provided. A metal wiring 17 (171 and 172) is formed on an interlayer insulating film 14. A metal wiring 171 among the metal wiring 17 is related to a selective open hole 15 on the interlayer insulating film 14, and has a region connected to the silicide layer 12. A metal wiring 172 in the metal wiring 17 is related to a selective open hole 16 for the second layer 142 of the interlayer insulating film 14, and comprises a region opposed to the silicide layer 12 through the first layer 141 of the interlayer insulating film 14. COPYRIGHT: (C)2004,JPO
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