发明名称 |
Fluorine free integrated process for etching aluminum including chamber dry clean |
摘要 |
A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma reactor. The ARC open uses either BCl3/Cl2 or Cl2 and possibly a hydrocarbon passivating gas, preferably C2H4. The aluminum main etch preferably includes BCl3/Cl2 etch and C2H4 diluted with He. The dilution is particularly effective for small flow rates of C2H4. An over etch into the Ti/TiN barrier layer and part way into the underlying dielectric may use a chemistry similar to the main etch. A Cl2/O2 chamber cleaning may be performed, preferably with the wafer removed from the chamber and after every wafer cycle.
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申请公布号 |
US2004074869(A1) |
申请公布日期 |
2004.04.22 |
申请号 |
US20020273580 |
申请日期 |
2002.10.18 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WANG XIKUN;CHEN HUI;JIANG ANBEI;SHIH HONG;MAK STEVE S. Y. |
分类号 |
C23F4/00;H01L21/311;H01L21/3213;(IPC1-7):C23F1/00;B44C1/22;C03C15/00;C03C25/68 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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地址 |
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