发明名称 SURFACE ACOUSTIC WAVE DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a high performance and inexpensive surface acoustic wave device which prevents loss increase (deterioration) caused by damage to the substrate of RIE used in IDT electrode working of a surface acoustic wave element. SOLUTION: A dummy pattern is formed in advance in the open area of an IDT electrode 4 on a piezoelectric substrate 1. The surface of the piezoelectric substrate 1 is prevented from being struck by active ions when the IDT electrode 4 is subjected to RIE working to eliminate the cause of crystal structure disturbance in an IDT electrode space part of the piezoelectric substrate 1. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004128965(A) 申请公布日期 2004.04.22
申请号 JP20020291303 申请日期 2002.10.03
申请人 MITSUBISHI ELECTRIC CORP 发明人 MURASE ISAO
分类号 H03H3/08;H03H9/145;(IPC1-7):H03H3/08 主分类号 H03H3/08
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