发明名称 |
Method of fabricating transistor device |
摘要 |
A method for making a transistor device includes embossing to separate parts of a layer of electrically-conducting material, thereby separating a source and a drain. The gap between the source and the drain is filled with a semiconductor material, and the source and drain are operatively coupled to a gate to make a transistor. The electrically-conducting material and the semiconductor material may be deposited using printing processes, and the various steps in the method of making the device may be performed in one or more row-to-row operations.
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申请公布号 |
US2004075155(A1) |
申请公布日期 |
2004.04.22 |
申请号 |
US20020274062 |
申请日期 |
2002.10.17 |
申请人 |
HUANG ZHISONG;GRUNLAN JAIME;CHANG PI |
发明人 |
HUANG ZHISONG;GRUNLAN JAIME;CHANG PI |
分类号 |
H01L21/336;H01L51/05;H01L51/40;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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