| 发明名称 |
SURFACE MODIFYING METHOD OF SOLID COMPOUND HAVING Si-O-Si BOND BY USING LASER BEAM |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To form a silica glass (SiO<SB>2</SB>) film of good quality on a flexible substrate for manufacturing optical devices such as an SiO<SB>2</SB>optical waveguide and a photonic crystal. <P>SOLUTION: A polysiloxane 1 of a solid compound containing Si-O-Si bonds is irradiated with a vacuum ultraviolet laser beam having a wavelength of≤190 nm at an ablation threshold (about 140 mJ/cm<SP>2</SP>) or lower to completely remove the side chain constituting the polysiloxane by photocleavage, and simultaneously by expanding that portion, an SiO<SB>2</SB>raised layer having a height of about 3μm is directly formed on the surface of the polysiloxane. Further, the SiO<SB>2</SB>raised layer thus formed can be chemically removed, and an SiO<SB>2</SB>raised layer can be reformed at any position on the same polysiloxane to prepare a rewritable optical element as well. <P>COPYRIGHT: (C)2004,JPO</p> |
| 申请公布号 |
JP2004123816(A) |
申请公布日期 |
2004.04.22 |
| 申请号 |
JP20020286932 |
申请日期 |
2002.09.30 |
| 申请人 |
TECH RES & DEV INST OF JAPAN DEF AGENCY |
发明人 |
OGOSHI MASAYUKI;INOUE SHIGEMI;TAKAO TOMOHIRO |
| 分类号 |
B23K26/00;C03B8/00;C08J7/00;C23C14/28;H01L21/316;(IPC1-7):C08J7/00 |
主分类号 |
B23K26/00 |
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