| 摘要 |
A semiconductor circuit configuration is described, in particular for ignition applications, having a semiconductor power switching device (100) which has a first main terminal (102), a second main terminal (101) and a control terminal (103); a clamping diode device (205a, 205b) which is switched between the first main terminal (102) and the control terminal (103) for clamping an external voltage (VA) which is applied at the first main terminal (202); the clamping diode device (205a, 205b) having a first part (205a) with a first clamp voltage and a second part (205b) with a second clamp voltage (VKL'), the second part (205b) being connected in series with the first part (205a); a controllable semiconductor switching device (402, 650) which is connected in parallel with the first part (205a) for controllable bridging of the first part (205a), so that either the sum (VKL) of the first and the second clamp voltages, or the second clamp voltage (VKL') is provided for clamping the external voltage (VA) applied at the first main terminal (202); and a control circuit (403) for controlling the controllable semiconductor switching device (402) as a function of a predetermined operating state of the semiconductor power switching device (100).
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