发明名称 |
Method and composition to improve a nitride/oxide wet etching selectivity |
摘要 |
A method for wet etching a metal nitride containing layer overlying a silicon oxide containing layer in a semiconductor device or micro-electro-mechanical device manufacturing process including providing a substrate including a silicon oxide containing layer and an overlying exposed metal nitride containing layer; providing a wet etching solution including phosphoric acid and water; adding a silicon containing compound which undergoes a hydrolysis reaction in the wet etching solution; and, contacting the exposed metal nitride containing layer with the wet etching solution for a period of time to remove the metal nitride containing layer.
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申请公布号 |
US2004077171(A1) |
申请公布日期 |
2004.04.22 |
申请号 |
US20020274603 |
申请日期 |
2002.10.21 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHUANG PING;LEE HUXLEY;LO HENRY |
分类号 |
H01L21/311;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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