发明名称 |
Method of forming a vertical memory device with a rectangular trench |
摘要 |
A method of forming a vertical memory device with a rectangular trench. First, a substrate covered by a photoresist layer is provided. Next, the photoresist layer is defined by a mask to form a rectangular opening, wherein the mask has two rectangular transparent patterns arranged with a predetermined interval. Next, the substrate is etched using the defined photoresist layer as a mask to form a single rectangular trench and the photoresist layer is then removed. Finally, a trench capacitor and a vertical transistor are successively formed in the rectangular trench to finish the vertical memory device.
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申请公布号 |
US2004076893(A1) |
申请公布日期 |
2004.04.22 |
申请号 |
US20030448675 |
申请日期 |
2003.05.29 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
SHU YU-SHENG;WU YUAN-HSUN;LEE CHUNG-YUAN;LIN SHIAN-JYH |
分类号 |
G03C5/00;G03F1/14;G03F9/00;H01L21/027;H01L21/308;H01L21/336;H01L21/76;H01L21/8242;H01L27/02;(IPC1-7):G03F9/00 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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