Field effect transistor comprises a semiconductor substrate, a source recess and a drain recess formed in the substrate, a recessed insulating layer, an electrically conducting filler layer, a gate dielectric, and a gate layer

摘要

Field effect transistor comprises a semiconductor substrate (1), a source recess (SV) and a drain recess (DV) formed in the substrate, a recessed insulating layer (VI) formed in the base region of the source and drain recess, an electrically conducting filler layer (F) formed on the surface of the insulating layer, a gate dielectric (3) formed on the substrate surface between the source and drain recesses, and a gate layer (4) formed on the surface of the gate dielectric. An Independent claim is also included for a process for the production of a field effect transistor.