| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element for preventing bridging between cells when wet-etching an oxide film in a cell region by manufacturing a cylindrical capacitor by selectively etching only the oxide film in the cell region. <P>SOLUTION: By selectively etching only the oxide film 118 in the cell region C under the condition where a peripheral circuit region P is sealed with a photosensitive film 126 to manufacture the cylindrical capacitor 124, a step hardly occurs between an interlayer insulation film formed on the cell region and that formed on the peripheral circuit region, when the interlayer insulation films are formed in following processes, so that it is not necessary to perform a process for removing it in a following process. Further, by performing a simple wet etching process using a single wet station without another dry etching process for removing the oxide film in the cell region and a photosensitive film pattern, no bridging phenomenon between cells are induced, so that yield of a device is improved. <P>COPYRIGHT: (C)2004,JPO |
