| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to be capable of minimizing the cross-talk between neighboring pixels for considerably improving the performance and yield of the image sensor. CONSTITUTION: An image sensor is provided with a first conductive type substrate(20a) of high concentration, the first conductive type epitaxial layer(20b) formed on the first conductive type substrate of high concentration, and a photo diode formed from the surface of the epitaxial layer to the substrate region. At this time, the epitaxial layer has a thickness of 3-5 m. Preferably, the image sensor further includes an isolation layer(21) formed on the epitaxial layer for contacting one side of the photo diode and the first conductive type channel stop region(P+) formed from the lower portion of the isolation layer to the substrate region. The channel stop region has the same width as the isolation layer.
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