发明名称 SEMICONDUCTOR CHIP AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE: A semiconductor chip and a manufacturing method thereof are provided to be capable of uniformly distributing ions in a semiconductor device in a depositing process using plasma for preventing the damage of the semiconductor device. CONSTITUTION: A semiconductor chip is provided with a wafer substrate(21) having a plurality of semiconductor devices(23) such as a transistor, a poly layer(29) deposed on the backside of the wafer substrate, a via(43) connected with the poly layer through the wafer, and a metal chip guard(27) formed at the upper portion of the wafer for being connected with the via. Preferably, the metal chip guard is formed at each layer when the semiconductor chip is shaped into a multilayer structure. At this time, the metal chip guards formed at each layer are capable of being connected with the poly layer by using the via.
申请公布号 KR20040032548(A) 申请公布日期 2004.04.17
申请号 KR20020061739 申请日期 2002.10.10
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 KO, HAN SEOK
分类号 H01L27/08;(IPC1-7):H01L27/08 主分类号 H01L27/08
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