发明名称 MAGNETIC RANDOM ACCESS MEMORY
摘要 PROBLEM TO BE SOLVED: To improve reliability by reading tuning information correctly. SOLUTION: An information storage section which stores tuning information is composed of a plurality of magnetic element and latch circuits. The magnetic element and latch circuit 17 has magnetoresistance effect elements M1 and bM1, in which the tuning information is stored. Complementary data are stored in the magnetoresistance effect elements M1 and bM1. After power-on, a power-on detection circuit outputs latch signals LATCH1 and LATCH2. When the latch signal LATCH1 becomes "H", the tuning information is transferred to the latch circuit. When the latch signal LATCH2 becomes "H", the tuning information is latched onto the latch circuit, and supplied to an internal circuit. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004118921(A) 申请公布日期 2004.04.15
申请号 JP20020279743 申请日期 2002.09.25
申请人 TOSHIBA CORP 发明人 FUJITA KATSUYUKI
分类号 G11C11/15;G11C11/16;G11C14/00;G11C29/00;G11C29/04;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/15 主分类号 G11C11/15
代理机构 代理人
主权项
地址