| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image sensing device which prevents a metal contamination of a photoelectric transfer part, has a high production yield, and can be driven at a low voltage with a low power consumption. SOLUTION: In a method for manufacturing the solid-state image sensing device, the photoelectric transfer part and an electric charge transfer element provided with a plurality of electric charge transfer electrodes for transferring electric charges produced by the photoelectric transfer part are formed on a surface of a semiconductor substrate. A formation step of the electric charge transfer electrodes arrayed through a gate oxide film on the semiconductor substrate contains a formation step of a metal film, and the formation step of the metal film is executed after formation of the photoelectric transfer part. COPYRIGHT: (C)2004,JPO
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