| 摘要 |
PROBLEM TO BE SOLVED: To make a cross section shape of a laser beam circular, to prevent destruction of an end face of a resonator and to make output high in a red semiconductor laser. SOLUTION: A semiconductor laser device is provided with an n-type GaAs substrate having band-like slopes in a part of a main face, an n-type clad layer, an active layer of a quantum well structure of three periods, a p-type clad layer (comprising current block layer in intermediate layer) and a p-type contact layer which are sequentially overlapped and formed on the main face of the substrate, a p-side electrode disposed on the contact layer, and an n-side electrode arranged at a backside of the substrate. The element emits the laser beam from an active layer on the slope. A window and a current non-injection layer are installed at an end face of the resonator, and thermal destruction of the end face of the resonator is suppressed. Thus, destruction of the end face of the resonator hardly occurs, and high output is realized. An aspect ratio of a far-field pattern of the laser beam becomes smaller than 1.5, and the cross section shape of the laser beam is approximated as circular. COPYRIGHT: (C)2004,JPO
|
