发明名称 |
Apparatus and method for detecting an endpoint in a vapor phase etch |
摘要 |
Processes for the removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the ability to accurately determine the endpoint of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the endpoint of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber
|
申请公布号 |
US2004069747(A1) |
申请公布日期 |
2004.04.15 |
申请号 |
US20020269149 |
申请日期 |
2002.10.11 |
申请人 |
REFLECTIVITY, INC., A CALIFORNIA CORPORATION |
发明人 |
PATEL SATYADEV R.;SCHAADT GREGORY P.;MACDONALD DOUGLAS B.;MACDONALD NILES K.;SHI HONGQIN |
分类号 |
G01L21/30;G01R31/00;H01J37/32;(IPC1-7):G01L21/30 |
主分类号 |
G01L21/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|