| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory cell, equipped with a path, through which hydrogen diffuses into a transistor in a memory IC, especially in a ferroelectric IC. <P>SOLUTION: A memory cell equipped with a path, through which hydrogen diffuses into a transistor, is provided to be used in a ferroelectric IC. The diffusion path is provided by forming a contact, in which the upper section overlaps the lower section, thus creating a gap that serves as a hydrogen diffusion path. The hydrogen diffusion path is necessary for annealing damage to the gate oxide. <P>COPYRIGHT: (C)2004,JPO |
