| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can simply obtain an accurate capacity unit and which has a stable capacitive element in response to a microminiaturization, and to provide a method for manufacturing the same. SOLUTION: A MIM (metal insulator metal) structure of a wiring layer metal 21, a capacitor insulating film 31 and a metal pattern 41 on an interlayer dielectric 11 becomes a capacity unit U1. Further, the metal insulator metal structure of a wiring layer metal 22, a capacitor insulating film 32 and a metal pattern 42 on an interlayer dielectric 12 becomes a capacity unit U2. These units U1, U2 constitute a capacitive element C1 by connecting in parallel via connecting regions V11, V12, V21-V23 and wiring layer metals 22a, 23a, and 23b. One electrode (lower electrode) of the element C1 is the wiring layer metal 23a, and the other electrode (upper electrode) is the wiring layer metal 23b. COPYRIGHT: (C)2004,JPO
|
