| 摘要 |
An open bit line dynamic random access memory (DRAM) architecture uses a multiple layer bit line configuration to reduce coupling between switching bit lines in the device. In one approach, each successive cell within a row of DRAM cells is coupled to a bit line segment that is on a different metallization layer than a previous cell in the row. Shielding members are also provided between adjacent bit lines on a common metallization layer to further reduce noise coupling. Functionality is also provided for reducing the effect of word line to bit line coupling in the DRAM device using dummy signal injection techniques. In this manner, common mode noise that could otherwise saturate one or more sense amplifiers within the DRAM device is reduced or eliminated before such saturation can take place. In one approach, dummy cells and reference cells are provided for use in performing the signal injection. The principles of the present invention are particularly well suited for use within embedded DRAM structures where low charge storage capacity within individual cells reduces the signal voltage levels that are achievable.
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