发明名称 |
Method of manufacturing a semiconductor device using a slurry for chemical mechanical polishing of copper |
摘要 |
A method of manufacturing a semiconductor device using a polishing slurry for CMP of Cu, which includes a first complexing agent containing a heterocyclic compound which is capable of forming a water-insoluble complex with Cu, and a second complexing agent containing a heterocyclic compound which is capable of forming a slightly water-soluble or water-soluble complex with Cu to thereby provide at least one extra ligand subsequent to formation of the complex. |
申请公布号 |
US6720250(B2) |
申请公布日期 |
2004.04.13 |
申请号 |
US20020303855 |
申请日期 |
2002.11.26 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MINAMIHABA GAKU;YANO HIROYUKI |
分类号 |
B24B57/02;B24B37/00;C09G1/02;C23F3/00;H01L21/304;H01L21/321;(IPC1-7):H01L21/476 |
主分类号 |
B24B57/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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