<p>Acid-catalyzed positive resist compositions which are imageable with 193nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer component comprising an acid-sensitive polymer having a monomeric unit with a pendant group containing a remote acid labile moiety.</p>
申请公布号
WO2004029719(A1)
申请公布日期
2004.04.08
申请号
WO2003EP10688
申请日期
2003.08.28
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;COMPAGNIE IBM FRANCE