| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for initializing the magnetic orientation of a magnetic random access memory cell by which magnetization of a fixed layer can be initialized without applying electric field stress to an element because there is no local thermal stress and no need of taking into account the heat radiation of the element and the element itself is unnecessary to be applied with current. SOLUTION: The magnetic random access memory cell is provided with a magnetic tunnel junction body that comprises a first ferromagnetic layer 7, a first insulation film 6 formed thereon, and a second ferromagnetic layer 5 formed thereon, and is formed on a semiconductor substrate, an anti-ferromagnetic layer 8 formed on the bottom of the first ferromagnetic layer 7, first and second conductive layers 9 and 4 that are electrically connected with the anti-ferromagnetic layer 8 and the second ferromagnetic layer 5 respectively, a transistor 12 connected with the first conductive layer 9, and a third conductive layer 11 that is formed on the bottom of the magnetic tunnel junction body and is electrically isolated from the magnetic tunnel junction body. In the initialization method for the magnetic orientation of the first ferromagnetic layer thereof, a semiconductor chip itself with cells is heated up to a first temperature by an external heat source, and first and second currents are supplied to the second and third conductive layers 9 and 11 respectively. COPYRIGHT: (C)2004,JPO
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