SEMICONDUCTOR STORAGE DEVICE AND DRIVING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide ferroelectric memory compensated for the offset in a gain transistor. SOLUTION: This semiconductor storage device is provided with a plurality of memory cells consisting of a bus transistor and a ferroelectric capacitor. The plurality of memory cells are connected via a sub-bit line. The gates of the gate transistors are connected to one end of the sub-bit line, the drains of the gain transistors are connected to the bit lines, and the sources are connected to the source lines. It is made possible to charge a storage node to the threshold voltage of the gain transistor by providing the semiconductor storage device with a means for charging the sub-bit line to the threshold voltage value of the gain transistor or to a voltage value which is the sum of the offset value and the threshold voltage. Since the threshold voltage of the gain transistor is fed back to the gate potential, the influence of variation in the threshold voltage can be eliminated and the device can operate stably. COPYRIGHT: (C)2004,JPO