发明名称 METHOD AND APPARATUS FOR PLASMA GENERATION
摘要 In a simple method and device for producing plasma flows of a metal and/or a gas electric discharges are periodically produced between the anode and a metal magnetron sputtering cathode in crossed electric and magnetic fields in a chamber having a low pressure of a gas. The discharges are produced so that a permanent direct-current discharge is applied with a low electrical current passing between the anode and cathode for producing a metal vapor by magnetron sputtering, and periodic discharges are produced with a high electrical current passing between the anode and cathode for producing an ionization of gas and the produced metal vapor. During the discharges, the driving current is µ 2 S, where S is the active surface of the cathode in cm 2 and µ 2 has a value of 1-10 A/cm 2 . Intensive gas or metal plasma flows can be produced without forming contracted arc discharges. The selfsputtering phenomenon can be used.
申请公布号 EP1404889(A1) 申请公布日期 2004.04.07
申请号 EP20020741573 申请日期 2002.06.14
申请人 CHEMFILT R & D AKTIEBOLAG 发明人 KOUZNETSOV, VLADIMIR
分类号 H05H1/24;C23C14/34;H01J37/34 主分类号 H05H1/24
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