发明名称 Semiconductor photodetector
摘要 The present invention provides an optical waveguide structure comprising plural periods of a multi-layered structure which comprises an InGaAs optical absorption layer of a first conductivity type, a pair of first and second InGaAsP cladding layers of the first conductivity type sandwiching the InGaAs optical absorption layer, and a pair of a first InP layer of the first conductivity type and a second InP layer of a second conductivity type, and the first and second InP layers sandwiching the first and second InGaAsP cladding layers.
申请公布号 US6718108(B2) 申请公布日期 2004.04.06
申请号 US20000731696 申请日期 2000.12.08
申请人 NEC COMPOUND SEMICONDUCTOR DEVICES 发明人 KUSAKABE ATSUHIKO
分类号 H01L31/10;H01L31/0232;H01L31/0352;H01L31/103;(IPC1-7):G02B6/10 主分类号 H01L31/10
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