发明名称 |
Semiconductor power conversion apparatus |
摘要 |
A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of the IGBT. A case of a resistor on the high-voltage side of the voltage dividing point is fixed to an emitter potential of the IGBT.
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申请公布号 |
US6717177(B2) |
申请公布日期 |
2004.04.06 |
申请号 |
US20030400479 |
申请日期 |
2003.03.28 |
申请人 |
HITACHI, LTD. |
发明人 |
KATOH SHUJI;UEDA SHIGETA;SAKAI HIROMITSU;IKIMI TAKASHI;ITO TOMOMICHI |
分类号 |
H01L27/06;H02M1/00;H03K17/00;H03K17/082;(IPC1-7):H01L29/40;H02H7/122;H03K17/60 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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