发明名称 Semiconductor power conversion apparatus
摘要 A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage dividing point to a gate of the IGBT. A case of a resistor on the high-voltage side of the voltage dividing point is fixed to an emitter potential of the IGBT.
申请公布号 US6717177(B2) 申请公布日期 2004.04.06
申请号 US20030400479 申请日期 2003.03.28
申请人 HITACHI, LTD. 发明人 KATOH SHUJI;UEDA SHIGETA;SAKAI HIROMITSU;IKIMI TAKASHI;ITO TOMOMICHI
分类号 H01L27/06;H02M1/00;H03K17/00;H03K17/082;(IPC1-7):H01L29/40;H02H7/122;H03K17/60 主分类号 H01L27/06
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