SEMICONDUCTOR DEVICE, REFLECTIVE LIQUID CRYSTAL DISPLAY DEVICE AND REFLECTIVE LIQUID CRYSTAL PROJECTOR

摘要

PROBLEM TO BE SOLVED: To make a pixel small in area without deteriorating noise resistance.

SOLUTION: A transistor 13 for switching and a capacitor 15 for signal storage are formed at every unit region of pixel Px on a first conductivity type semiconductor substrate 11 (base semiconductor region). The transistor 13 for switching is constituted in such a manner that a second conductivity type source region 13S and a drain region 13D are formed on the semiconductor substrate 11 and a gate electrode 13G is formed via an insulation layer 12a on the region between the source region 13S and the drain region 13D. The capacitor 15 for signal storage is constituted in such a manner that high density semiconductor regions 15D, 15S of the first conductivity type are formed on the semiconductor substrate 11 and an electrode 15G is formed via an insulation layer 12b on the region between the semiconductor regions 15D, 15S.

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