| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element extremely inexpensive with a low operating voltage by suppressing the In diffusion in a semiconductor contact layer from a metal oxide window layer and generating tunnel current on a low voltage. <P>SOLUTION: In the semiconductor light emitting element having a light emitting unit, an active layer 4 is interposed between clad layers 3 and 5 having different conductivity, formed on a first conductivity substrate 1, a second conductivity contact layer 6 is formed on the emitting unit, a metal oxide window layer 7 is formed on the contact layer 6, a surface electrode 8 is formed on a partial surface side, and a rear surface electrode 9 of an overall or partial electrode is formed on the rear surface of the substrate. The window layer 7 is formed of a 2-layer structure of a high-temperature forming part 7a of a film forming temperature of 400°C or higher and a film of a low-temperature forming part 7b of a film forming temperature of 350°C or lower. <P>COPYRIGHT: (C)2004,JPO |
