Magnetoresistive element and magnetic memory allowing high density

摘要

The unit has a reference layer with a fixed magnetization direction. A storage layer (2e) has a main body in which a length in an easy magnetization axis direction (5) is longer than that of a hard magnetization axis direction. A projecting portion is provided to a central portion of the body in the hard magnetization axis direction. A direction of magnetization of the layer is changeable with an external magnetic field. An independent claim is also included for a magnetic memory.