| 摘要 |
A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a bulk layer between front and back surface layers. The wafer is subjected to a heat-treatment in an atmosphere to form crystal lattice vacancies. A surface of the wafer is oxidized by heating in the presence of an oxygen-containing atmosphere to effect the vacancy concentration profile. The wafer is cooled at a rate which allows some, but not all, the crystal lattice vacancies to diffuse to the surfaces such that the concentration of vacancies in the bulk layer is greater than in the surface layers. The vacancy concentration profile shape is determined in part by the heat-treatment atmosphere, in part by the surface oxidation, and in part by the cooling rate.
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