发明名称 APPARATUS AND METHOD FOR ADIABATICALLY HEATING A SEMICONDUCTOR SURFACE
摘要 A method for adiabatically heating semiconductor device surfaces, including using capping layers to prevent deformation of surfaces. Using the method, semiconductor surfaces having varying topographies or topologies may be heated adiabatically. In an embodiment of the method, one or more capping layers may be formed over a semiconductor surface, to further prevent deformation of semiconductor surfaces.
申请公布号 US2004058501(A1) 申请公布日期 2004.03.25
申请号 US20020253762 申请日期 2002.09.24
申请人 MAIZ JOSE A.;SISTA SARANGAPANI;LIU MARK 发明人 MAIZ JOSE A.;SISTA SARANGAPANI;LIU MARK
分类号 H01L21/268;H01L21/324;(IPC1-7):H01L21/66;H01L21/336 主分类号 H01L21/268
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