| 摘要 |
The present invention provides a manufacturing method of a contact for use in a semiconductor device and a manufacturing method of a PMOS device using the same, which can obtain an electrical characteristic of a low contact resistance similar to a mixed implantation of 49BF2<+> ions and 11B<+> ions and reduce a manufacturing cost. The method for forming a contact of a semiconductor device includes: the steps of: forming an insulating layer on a conductive semiconductor layer; forming a contact hole within the insulating layer to expose a portion of the conductive semiconductor layer; forming a plug implantation region by implanting 30BF<+> ions into the exposed conductive semiconductor layer disposed on a bottom of the contact hole; performing an annealing process for activating dopants injected by the implantation of 30BF<+> ions; and filling the contact hole with a conductive layer.
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