发明名称 LOW-COST, SERIALLY-CONNECTED, MULTI-LEVEL MASK-PROGRAMMABLE READ-ONLY MEMORY
摘要 An integrated circuit includes a serially-connected, multi-level, mask-programmed read-only memory array. The memory cells are preferably programmed using selective ion implantation of at least two threshold-adjusting ion implants during the manufacture of the integrated circuit to store more than one bit of information within each memory cell, which are chosen to generate an evenly spaced set of different transistor threshold voltages.
申请公布号 WO2004003926(A3) 申请公布日期 2004.03.25
申请号 WO2003US20051 申请日期 2003.06.25
申请人 MATRIX SEMICONDUCTOR, INC. 发明人 JOHNSON, MARK, G.
分类号 G11C11/56;G11C17/12 主分类号 G11C11/56
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