发明名称 A METHOD OF INCREASING THE AREA OF A USEFUL LAYER OF MATERIAL TRANSFERRED ONTO A SUPPORT
摘要 The invention relates to a method of increasing the area of a useful layer (63) of material coming from a source substrate (6) and which has been transferred onto a support substrate (7). The invention is remarkable in that one of the two substrates is surrounded by a primary chamfer (74, 64), its front face presenting at least a flat central zone (70) of outline (C7), in that the front face of the other substrate is a flat zone (67) bordered by a peripheral side face (66), perpendicular or quasi-perpendicular thereto, the outer outline (C"6) of said flat zone (67) presenting dimensions greater than the dimensions of the outer outline (C7) of said flat central zone (70) of the first substrate (7), and in that during bonding, the two substrates (6, 7) are applied one against the other in such a manner that the outline (C7) of said flat central zone (70) is inscribed within the outline (C"6) of said flat zone (67). The invention is applicable to fabricating a composite substrate for electronics, optics, or optoelectronics.
申请公布号 WO2004025722(A1) 申请公布日期 2004.03.25
申请号 WO2003EP07856 申请日期 2003.07.16
申请人 SOITEC SILICON ON INSULATOR;MALEVILLE CHRISTOPHE 发明人 MALEVILLE CHRISTOPHE
分类号 H01L27/12;H01L21/02;H01L21/762 主分类号 H01L27/12
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