| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device, whose optical output hardly saturates even when big current is injected thereinto. SOLUTION: The semiconductor laser device 100 is provided with a multiple quantum well-separated and entrapped heterostructure. A carrier stop layer 15 is arranged between an upper separated and entrapped heterosturcture layer 12 and a p-type upper clad layer 16. The carrier stop layer functions as a potential barrier with respect to an electron, going from an activating layer toward an upper clad layer by carrier overflow. According to this constitution, a leakage current due to the carrier overflow is reduced. Especially, when the thickness of the carrier stop layer is not larger than 5nm and the p-type dopant concentration of the carrier stop layer is not less than 1.0×10<SP>18</SP>cm<SP>-3</SP>, the leakage current is reduced remarkably. COPYRIGHT: (C)2004,JPO
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