发明名称 SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser along with its manufacturing method wherein laser chips of varying resonator lengths are manufactured from the same semiconductor wafer. SOLUTION: In an electrode pattern forming process, an electrode pattern 3' is formed on the upper surface of a semiconductor wafer 10. In a wafer cutting process, the semiconductor wafer 10 in which the electrode pattern 3' is formed is cut at a prescribed pitch to provide a plurality of semiconductor bars 11. In a semiconductor bar dividing process, the resulting semiconductor bar 11 is divided into prescribed chip sizes, to provide a semiconductor laser R<SB>1</SB>. The electrode pattern 3' formed in the electrode pattern forming process is continued at least in the resonator length direction A. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004095859(A) 申请公布日期 2004.03.25
申请号 JP20020255018 申请日期 2002.08.30
申请人 SHARP CORP 发明人 OTA MASAYUKI;KANEIWA SHINJI;OSHIMA NOBORU
分类号 H01S5/02;H01S5/042;H01S5/10;(IPC1-7):H01S5/042 主分类号 H01S5/02
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