| 摘要 |
<p>A film forming method and apparatus are provided, in which, as shown in Fig.4, a rotational symmetrical substrate 41 on which a film is formed is rotated along the rotational symmetry axis in a sufficiently vacuum container 40. And, a target material 42 in the container 40 is heated or irradiated ion beam to scatter atoms of the target material 42 and deposited the scattered atoms on the substrate 41. A film thickness regulating plate 10 which shields part of the scattered atoms is arranged near the substrate 41. The film thickness regulating plate 10 is composed a shape-constant regulating plate 11 as shown in Fig.3 and a shape-variable regulating plate 21 as shown in Fig.2. <IMAGE></p> |
