Nitrogen doped single crystal silicon wafer with few defects and method for its production

摘要

There is disclosed a method for producing a silicon single crystal wafer characterized in that a silicon single crystal is grown in accordance with the CZ method with doping nitrogen in an N-region in a defect distribution chart which shows a defect distribution in which the horizontal axis represents a radial distance D (mm) from the center of the crystal and the vertical axis represent a value of F/G (mm<2>/ DEG C . min), where F is a pulling rate (mm/min) of the single crystal, and G is an average intra-crystal temperature gradient( DEG C/mm) along the pulling direction within a temperature range of the melting point of silicon to 1400 DEG C. There can be provided a method of producing a silicon single crystal wafer consisting of N-region where neither V-rich region nor I-rich region is present in the entire surface of the crystal by CZ method, under the condition that can be controlled easily in a wide range, in high yield, and in high productivity.