SOI MOS TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An SOI(Silicon On Insulator) MOS transistor and a method for manufacturing the same are provided to minimize floating body effect by constantly maintaining body potential. CONSTITUTION: A gate insulating layer(18) and a gate electrode(20) are formed on an SOI substrate. A source/drain(28) is formed in the substrate to align the gate electrode. A silicide layer(30) is formed on the surface of the gate electrode and the source/drain. Schottky diode is connected between the source and the surface of the substrate, thereby constantly maintaining body potential.