FLASH MEMORY CELL AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A flash memory cell and a method for manufacturing the same are provided to reduce surface resistance by forming a silicide layer on a buried impurity diffusion layer. CONSTITUTION: Isolation layers are formed on a semiconductor substrate(100). A floating gate of a flash memory is formed on the substrate to cross the isolation layer. By patterning the isolation layers, the substrate between the floating gates is exposed. A buried impurity diffusion layer(112) is formed on the exposed substrate. A silicide layer(114) is then formed on the surface of the buried impurity diffusion layer. An insulating layer(118) is formed on the floating gate. A control gate(120) is formed on the resultant structure to cross the floating gate.