SEMICONDUCTOR DEVICE, MANUFACTURING METHOD, EVALUATION METHOD AND PROCESS CONDITION EVALUATION METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a semiconductor device which is excellent in electrical characteristics by using silicon nitride oxide for a gate insulating film. CONSTITUTION: The gate insulating film formed from the silicon nitride oxide is located on an area in a part of a surface of a semiconductor wafer. A gate electrode is located on the gate insulating film. Source and drain areas are located on both sides of the gate electrode. A presence ratio of a nitrogen atom of which three bonds are bonded all with silicon atoms and in which remaining three bonds of each of the three silicon atoms bonded to the said nitrogen atom are bonded all with the other nitrogen atom in nitrogen atoms in the gate insulating film in a total amount of nitrogen atoms is <= 20%.