CELL TRANSISTOR OF FLASH MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A cell transistor of a flash memory device and a method for manufacturing the same are provided to improve erasing efficiency by forming a recessed groove at a source portion of cells. CONSTITUTION: A recessed groove(108) is formed on a source portion of a substrate(100). A gate insulating layer(114) is formed on the resultant structure. A floating gate(116a), an inter-gate insulating layer(118a) and a control gate(120a) are sequentially stacked on the gate insulating layer to partially overlap the groove(108). A source region(112) is formed in the substrate to partially overlap the groove. A drain region(122) is formed on the substrate.