发明名称 |
Low pressure chemical vapor deposition apparatus of vertical type for fabricating semiconductor devices |
摘要 |
A vertical type chemical vapor deposition apparatus includes a process chamber having a cylindrical inner tube and a cap shaped outer tube surrounding and apart from the inner tube. A manifold is coupled with lower portions of the inner and outer tubes, and has a lower portion tapered at an inclination angle. A heater is provided at an outer side of the outer tube for heating the process chamber. A boat is movable into and out of the process chamber through the manifold, as driven by an elevator. The boat is vertically loaded with wafers. A cap is fixed to the elevator at a lower portion of the boat, and has a portion contactable with the manifold that is tapered at a same inclination angle as the lower portion of the manifold. An O-ring is inserted into the portion of the cap contactable with the manifold.
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申请公布号 |
US6709525(B2) |
申请公布日期 |
2004.03.23 |
申请号 |
US20020136283 |
申请日期 |
2002.05.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG YOUN-SEOK |
分类号 |
C23C16/44;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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