发明名称 Low pressure chemical vapor deposition apparatus of vertical type for fabricating semiconductor devices
摘要 A vertical type chemical vapor deposition apparatus includes a process chamber having a cylindrical inner tube and a cap shaped outer tube surrounding and apart from the inner tube. A manifold is coupled with lower portions of the inner and outer tubes, and has a lower portion tapered at an inclination angle. A heater is provided at an outer side of the outer tube for heating the process chamber. A boat is movable into and out of the process chamber through the manifold, as driven by an elevator. The boat is vertically loaded with wafers. A cap is fixed to the elevator at a lower portion of the boat, and has a portion contactable with the manifold that is tapered at a same inclination angle as the lower portion of the manifold. An O-ring is inserted into the portion of the cap contactable with the manifold.
申请公布号 US6709525(B2) 申请公布日期 2004.03.23
申请号 US20020136283 申请日期 2002.05.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG YOUN-SEOK
分类号 C23C16/44;(IPC1-7):C23C16/00 主分类号 C23C16/44
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